Intern – Process Engineering, Chemical Vapour Deposition (CVD)

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Project Description:
Crater defects in the tetraethyl orthosilicate chemical vapour deposition process present potential yield and integration challenges in a high-volume manufacturing environment. This project will focus on developing an understanding of crater defect mechanisms through structured data review and analysis.
 

The intern will explore process behaviour, defect characteristics, and key parameters within the chemical vapour deposition process, building foundational knowledge in semiconductor manufacturing, data analysis, and process engineering.

Project Scope:

• Gain understanding of the tetraethyl orthosilicate chemical vapour deposition process flow and chamber conditions
• Analyse inline defect and yield datasets to study crater defect characteristics and trends
• Observe structured experiment setups (design of experiment or split runs) conducted under engineering guidance
• Evaluate relationships between defect behaviour and film performance metrics through data analysis
• Document findings and observations across different process conditions

Learning Opportunities:
The intern will gain exposure to semiconductor process engineering concepts, defect analysis methodologies, and data-driven problem solving. The project will also provide opportunities to understand how engineering teams investigate yield-related challenges and evaluate process performance.

Deliverables:

• Consolidated dataset and analysis of crater defect behaviour
• Documented observations on relationships between process conditions and defect trends
• Summary of findings on potential areas for defect improvement exploration
• Final presentation outlining learning outcomes and key insights

Impact of Project:

• Improved understanding of crater defect characteristics and influencing factors
• Enhanced visibility of process and defect behaviour to inform engineering discussions

Skillsets Required:

• Data analysis and interpretation skills
• Structured problem-solving ability
• Clear technical communication and documentation skills
• Strong learning attitude
   

Course of Interest:
The ideal candidate should be pursuing a Bachelor’s Degree or equivalent experience in either Chemical Engineering, Materials Science and Engineering, Electrical Engineering, Mechanical Engineering, or related fields.

Duration Period:
Minimum 5 months (Full-time semester-long internship from July to November 2026)

About Micron Technology, Inc.

We are an industry leader in innovative memory and storage solutions transforming how the world uses information to enrich life for all. With a relentless focus on our customers, technology leadership, and manufacturing and operational excellence, Micron delivers a rich portfolio of high-performance DRAM, NAND, and NOR memory and storage products through our Micron® and Crucial® brands. Every day, the innovations that our people create fuel the data economy, enabling advances in artificial intelligence and 5G applications that unleash opportunities — from the data center to the intelligent edge and across the client and mobile user experience.

To learn more, please visit micron.com/careers

All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.

To request assistance with the application process and/or for reasonable accommodations, please contact hrsupport_sg@micron.com

Micron Prohibits the use of child labor and complies with all applicable laws, rules, regulations, and other international and industry labor standards.

Micron does not charge candidates any recruitment fees or unlawfully collect any other payment from candidates as consideration for their employment with Micron.

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