Principal Engineer, Reliability Engineering

About Analog Devices

Analog Devices, Inc. (NASDAQ: ADI) is a global semiconductor leader that bridges the physical and digital worlds to enable breakthroughs at the Intelligent Edge. ADI combines analog, digital, AI, and software technologies into solutions that combat climate change, reliably connect humans and the world, and help drive advancements in automation and robotics, mobility, healthcare, energy and data centers. With revenue of more than $11 billion in FY25, ADI ensures today's innovators stay Ahead of What's Possible. Learn more at www.analog.com and on LinkedIn and X.

          

The Team:
The Intrinsic Reliability (iRel) Group is responsible for ensuring Product/Process Lifetime Robustness. This is achieved by investigating the intrinsic reliability of semiconductor devices/circuits and sensors. The iRel Group is made up of a range of engineering disciplines including electronics, physics and mathematics. The group is split across two locations namely, ADLK (Limerick, Ireland) and ADSV (San Jose, CA). The successful candidate will reside in ADLK.

The Position:
The position to be filled is for a GaN Intrinsic Reliability Engineer who will provide technical leadership and domain expertise in the reliability characterization, modeling, and qualification of GaN and Wide Bandgap (WBG) semiconductor devices. This role is critical to de-risking GaN product development (100V and 650V) and supporting ADI’s expanding high-voltage and power semiconductor roadmap, while delivering industry-leading reliability performance.
The successful candidate will act as a company-wide expert in GaN intrinsic reliability, driving methodology, influencing design decisions, and ensuring robust product qualification across multiple programs.

Main responsibilities:

• Drive GaN intrinsic reliability strategy across 100V–650V technologies, ensuring alignment with product roadmaps.
• Define and execute reliability qualification methodologies, including HTGB, HTRB, switching, and transient stress testing.
• Lead physics-of-failure (PoF) investigations, identifying degradation mechanisms and driving root-cause resolution.
• Develop and validate lifetime and reliability models (voltage, temperature, switching dependencies) for GaN devices.
• Drive product de-risking activities in collaboration with design and product teams, ensuring early reliability coverage.
• Provide technical leadership and decision-making authority on reliability risks, guardbands, and design recommendations.
• Develop and enhance intrinsic reliability test infrastructure, including ATE-based and custom stress systems.
• Define and advance next-generation reliability methodologies for GaN and wider WBG technologies (SiC, AlGaN, etc.).

 Required skills:

• PhD or MSc in Physics, Electrical Engineering, or Semiconductor Engineering.
• Typically 10+ years’ experience in semiconductor reliability with significant GaN or WBG focus required.

For positions requiring access to technical data, Analog Devices, Inc. may have to obtain export  licensing approval from the U.S. Department of Commerce - Bureau of Industry and Security and/or the U.S. Department of State - Directorate of Defense Trade Controls.  As such, applicants for this position – except US Citizens, US Permanent Residents, and protected individuals as defined by 8 U.S.C. 1324b(a)(3) – may have to go through an export licensing review process.

Analog Devices is an equal opportunity employer. We foster a culture where everyone has an opportunity to succeed regardless of their race, color, religion, age, ancestry, national origin, social or ethnic origin, sex, sexual orientation, gender, gender identity, gender expression, marital status, pregnancy, parental status, disability, medical condition, genetic information, military or veteran status, union membership, and political affiliation, or any other legally protected group.

Job Req Type: Experienced

          

Required Travel: No

          

Shift Type: 1st Shift/Days